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U(F,B)10BCT thru U(F,B)10DCT
Vishay General Semiconductor
Document Number: 88967
Revision: 13-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
RATINGS AND CHARACTERISTICS CURVES
(TA
= 25 °C unless otherwise noted)
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Forward Power Loss Characteristics Per Diode
Figure 3. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
12
10
8
6
4
2
0
0 25 50 75 100 125 150
Resistive or Inductive Load
A
v
erage For
w
ard Re
ctified C
u
rrent (A)
Case Temperature (°C)
U(B)10xCT
UF10xCT
6
5
4
3
2
1
0
0123456
A
v
erage Po
w
er Loss (
W
)
Average Forward Current (A)
D = 0.1
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = 0.2
D = tp/T tp
T
100
10
1
110100
Number of Cycles
Peak For
w
ard S
u
rge C
u
rrent (A)
TJ
= T
J
max.
10 ms Single Half Sine-Wave
Figure 4. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Typical Reverse Characteristics Per Diode
Figure 6. Typical Junction Capacitance Per Diode
100
10
1
0.1
0.1 0.5 0.9 1.3 1.7 2.1
Instantaneous Forward Voltage (V)
Instantaneo
u
s For
w
ard C
u
rrent (A)
TJ
= 150 °C
TJ
= 125 °C
TJ
= 25 °C
10 000
1000
100
10
10 20 30 40 50 60 70
80 90 100
1
0.1
Percent of Rated Peak Reverse Voltage (%)
TJ
= 150 °C
TJ
= 125 °C
TJ
= 25 °C
Instantaneo
u
s Re
v
erse C
u
rrent (
μ
A)
100
10
1
0.1 1
10
100
Reverse Voltage (V)
TJ
= 25 °C
f = 1.0 MHz
Vsig
= 50 m
Vp-p
J
u
nction Capacitance (pF)
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